amplifiers - low noise - chip 1 1 - 1 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com gaas hemt low noise amplifier, 71 - 86 ghz v02.0209 general description features functional diagram n oise f igure: <5 db p 1db: +7 dbm gain: 13 db s upply voltage: +2.4v 50 o hm m atched i nput/ o utput die s ize: 3.2 x 1.6 x 0.1 mm electrical specifcations [1] , t a = +25 c vdd1=vdd2 = 2.1v, vdd3=2.4v, idd1+idd2+idd3 = 30 ma [2] typical applications this hm c-a lh 508 is ideal for: ? s hort h aul / h igh capacity l inks ? w ireless l a n s ? automotive r adar ? m ilitary & s pace ? e -band communication s ystems the hm c-a lh 508 is a three stage gaas hem t mmi c l ow n oise amplifer ( ln a) which operates between 71 and 86 g h z. the hm c-a lh 508 features 13 db of small signal gain, 4.5 db of noise fgure and an output power of +7 dbm at 1db compression from two supply voltages at 2.1v and 2.4v respectively. all bond pads and the die backside are ti/au metallized and the amplifer device is fully pass- ivated for reliable operation. this versatile ln a is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for m c m and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 o hm environment and contacted with rf probes. hmc-alh508 p arameter m in. typ. m ax. units f requency r ange 71 - 86 g h z gain 11 13 db n oise f igure 4.5 db i nput r eturn l oss 8 db o utput r eturn l oss 10 db o utput p ower for 1 db compression ( p 1db) 7 dbm total s upply current ( i dd1+ i dd2+ i dd3) 30 ma [1] unless otherwise indicated, all measurements are from probed die [2] adjust vgg1=vgg2 between -1v to +0.3v (typ -0.5v )to achieve i dd total = 30 ma
amplifiers - low noise - chip 1 1 - 2 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc-alh508 v02.0209 gaas hemt low noise amplifier, 71 - 86 ghz linear gain vs. frequency noise figure vs. frequency input return loss vs. frequency output return loss vs. frequency -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 70 72 74 76 78 80 82 84 86 88 90 return loss (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 70 72 74 76 78 80 82 84 86 88 90 return loss (db) frequency (ghz) 0 1 2 3 4 5 6 7 8 74 76 78 80 82 84 86 88 90 noise figure (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 70 72 74 76 78 80 82 84 86 88 90 gain (db) frequency (ghz)
amplifiers - low noise - chip 1 1 - 3 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com absolute maximum ratings drain bias voltage +3 vdc gate bias voltage -1 to +0.3 vdc rf i nput p ower -5 dbm thermal r esistance (channel to die bottom) 195.6 c/ w s torage temperature -65 to +150 c o perating temperature -55 to +85 c ele ct ros tat ic sensi t i v e de v ic e o b ser v e h a n d lin g pre caut ions hmc-alh508 v02.0209 gaas hemt low noise amplifier, 71 - 86 ghz outline drawing no t es : 1. a ll d imensions a re in in c hes [ mm ]. 2. ty pi ca l b on d p ad is .004 s qua re . 3. back si d e me ta lli zat ion : g ol d. 4. back si d e me ta l is g ro u n d. 5. b on d p ad me ta lli zat ion : g ol d. 6. c onne ct ion not re qu ire d for u nl ab ele d b on d p ad s . 7. o v er a ll d ie si z e .002 die packaging information [1] s tandard alternate g p -1 (gel p ack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation.
amplifiers - low noise - chip 1 1 - 4 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc-alh508 v02.0209 gaas hemt low noise amplifier, 71 - 86 ghz p ad n umber f unction description i nterface s chematic 1 rfin this pad is ac coupled and matched to 50 o hms. 2 - 4 vdd1, vdd2, vdd3 p ower s upply voltage for the amplifer. s ee assembly for required external components. 5 rfo ut this pad is ac coupled and matched to 50 o hms. 6 - 8 vgg1, vgg2, vgg3 gate control for amplifer. p lease follow mmi c amplifer bias - ing p rocedure application note. s ee assembly for required external components. die bottom g n d die bottom must be connected to rf /dc ground. pad descriptions
amplifiers - low noise - chip 1 1 - 5 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagram hmc-alh508 v02.0209 gaas hemt low noise amplifier, 71 - 86 ghz
amplifiers - low noise - chip 1 1 - 6 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hm c general h andling, m ounting, bonding n ote). 50 o hm m icrostrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip ( f igure 1). i f 0.254mm (10 mil) thick alumina thin flm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. o ne way to accom - plish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane ( f igure 2). m icrostrip substrates should be placed as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either w affle or gel based es d pro - tective containers, and then sealed in an es d protective bag for shipment. o nce the sealed es d protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: h andle the chips in a clean environment. d o no t attempt to clean the chip using liquid cleaning systems. static sensitivity: f ollow es d precautions to protect against es d strikes. transients: s uppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: h andle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with au s n eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. e utectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. w hen hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. d o no t expose the chip to a temperature greater than 320 c for more than 20 seconds. n o more than 3 seconds of scrubbing should be required for attachment. e poxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possible, less than 12 mils (0.31 mm). 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.127mm (0.005) thick alumina thin film substrate 0.076mm (0.003) figure 1. 0.102mm (0.004) thick gaas mmic wire bond rf ground plane 0.254mm (0.010) thick alumina thin film substrate 0.076mm (0.003) figure 2. 0.150mm (0.005) thick moly tab hmc-alh508 v02.0209 gaas hemt low noise amplifier, 71 - 86 ghz
|
